Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film.

ABSTRACT: Two-dimensional (2D) group-III-V honeycomb films have attracted significant interest for their potential application in fields of quantum computing and nanoelectronics. Searching for 2D III-V films with high structural stability and large-gap are crucial for the realizations of dissipationless transport edge states using quantum spin Hall (QSH) effect. Based on first-principles calculations, we predict that the methyl-functionalized InBi monolayer (InBiCH3) has no dynamic instability, and hosts QSH state with a band gap as large as 0.29 eV, exhibiting an interesting electronic behavior viable for room-temperature applications. The topological characteristic is confirmed by s-pxy band inversion, topological invariant Z2 number, and the time-reversal symmetry protected helical edge states. N

SUBMITTER: Li SS 

PROVIDER: S-EPMC4800414 | biostudies-literature | 2016 Mar

REPOSITORIES: biostudies-literature