Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures.

ABSTRACT: Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a 'giant' resis

SUBMITTER: Myoung N 

PROVIDER: S-EPMC4850479 | biostudies-literature | 2016 Apr

REPOSITORIES: biostudies-literature