Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.

ABSTRACT: Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the

SUBMITTER: Niu G 

PROVIDER: S-EPMC4867633 | biostudies-literature | 2016 May

REPOSITORIES: biostudies-literature