Interface dynamics and crystal phase switching in GaAs nanowires.

ABSTRACT: Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucle

SUBMITTER: Jacobsson D 

PROVIDER: S-EPMC4876924 | biostudies-literature | 2016 Mar

REPOSITORIES: biostudies-literature