Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.

ABSTRACT: Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory

SUBMITTER: Pradhan SK 

PROVIDER: S-EPMC4886213 | biostudies-literature | 2016 May

REPOSITORIES: biostudies-literature