Fast 180° magnetization switching in a strain-mediated multiferroic heterostructure driven by a voltage.

ABSTRACT: Voltage-driven 180° magnetization switching provides a low-power alternative to current-driven magnetization switching widely used in spintronic devices. Here we computationally demonstrate a promising route to achieve voltage-driven in-plane 180° magnetization switching in a strain-mediated multiferroic heterostructure (e.g., a heterostructure consisting of an amorphous, slightly elliptical Co40Fe40B20 nanomagnet on top of a Pb(Zr,Ti)O3 film as an example). This 180° switching follows a unique precessional path all in the film plane, and is enabled by manipulating magnetization dynamics with fast, local piezostrains (rise/release time <0.1 ns) on the Pb(Zr,Ti)O3 film surface. Our analyses predict ultralow area energy consumption per switching (~0.03 J/m(2)), approximately three orders of

SUBMITTER: Peng RC 

PROVIDER: S-EPMC4897746 | biostudies-literature | 2016 Jun

REPOSITORIES: biostudies-literature