Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction.

ABSTRACT: The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.

SUBMITTER: Carvalho D 

PROVIDER: S-EPMC4923855 | biostudies-literature | 2016 Jun

REPOSITORIES: biostudies-literature