Electronic Conduction in Ti/Poly-TiO2/Ti Structures.

ABSTRACT: Recent intensive investigations on metal/metal oxide/metal structures have targeted nanometric single grain oxides at high electric fields. Similar research on thicker polycrystalline oxide layers can bridge the results to the prior literature on varistors and may uncover novel ionic/electronic features originating from the conduction mechanisms involving grain boundaries. Here, we investigate electronic conduction in Ti/poly-TiO2-x/Ti structures with different oxygen vacancy distributions and describe the observed features based on the motion and rearrangement of the ionized oxygen vacancies (IOVs) on the grain facets rather than the grain interiors. Containing no interface energy barrier, Ti/poly-TiO2/Ti devices demonstrate high resistance ohmic conduction at biasing fields below 5 × 10(

SUBMITTER: Hossein-Babaei F 

PROVIDER: S-EPMC4940738 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature