Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications.

ABSTRACT: Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current, Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the layered semiconductor films primarily determined by a given Ion/Ioff as an acceptable specification. Identifying the optimum thickness range is of significance for material synthesis and device fabrication. Here, we systematically investigate the thickness-dependent switching behavior of transistors with a wide thickness range of multilayer-MoS2 films. A difference in Ion/Ioff by several orders of magnitude is observed when the film thickness, t, approaches a critical depletion width. The de

SUBMITTER: Zhang Y 

PROVIDER: S-EPMC4940740 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature