Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves.

ABSTRACT: The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly attentions, there are only few studies of vertical devices, which may offer the opportunity for the future three-dimensional integration. Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. The spin-valve effect, which corresponds to the individual switching of the top and bottom Fe layers, is bias dependent and o

SUBMITTER: Wong PK 

PROVIDER: S-EPMC4949422 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature