Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching.

ABSTRACT: Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (∼10(12) inch(-2)). We systematically show that these devices allow precise engineering of the resistance states, thu

SUBMITTER: Cho S 

PROVIDER: S-EPMC4980456 | biostudies-literature | 2016 Aug

REPOSITORIES: biostudies-literature