Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences.

ABSTRACT: The optical properties and structural variations of silicon (Si) doped Sb2Te (SST) films as functions of temperature (210-620 K) and Si concentration (0-33%) have been investigated by the means of temperature dependent Raman scattering and spectroscopic ellipsometry experiments. Based upon the changes in Raman phonon modes and dielectric functions, it can be concluded that the temperature ranges for intermediates and transition states are estimated to 150, 120, 90, and 0 K, corresponding to ST, SST25%, SST28%, and SST33% films, respectively. The phenomenon also can be summarized by the thermal evolutions of interband electronic transition energies (En) and partial spectral weight integral (I). The disappearance of intermediate (INT) state for SST33% film between amorphous (AM) and hexagona

SUBMITTER: Guo S 

PROVIDER: S-EPMC5027526 | biostudies-literature | 2016 Sep

REPOSITORIES: biostudies-literature