Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors.

ABSTRACT: Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fact, device structures with a small single-sided interlayer electrode gap directly probe the detrimental contact resistance arising from the presence of an injection barrier. By employing a self-alignment nanoimprint lithography technique, asymmetric coplanar organic transistors with an intentional gap of varying size (< 0.2 μm) between gate and one interlayer electrode are fabricated. An electrode ove

SUBMITTER: Zojer K 

PROVIDER: S-EPMC5037384 | biostudies-literature | 2016 Sep

REPOSITORIES: biostudies-literature