Understanding and Control of Bipolar Self-Doping in Copper Nitride.

ABSTRACT: Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu₃N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu₃N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu₃N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu₃N with an electron density of 10¹⁷ cm^-3 for low growth temperature (≈ 35 °C) and p-type wi

SUBMITTER: Fioretti AN 

PROVIDER: S-EPMC5061149 | biostudies-literature | 2016 May

REPOSITORIES: biostudies-literature