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Extremely Stable Current Emission of P-Doped SiC Flexible Field Emitters.

ABSTRACT: Novel P-doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E_to of 1.03-0.73 Vμm^-1 up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%-3.4%).

SUBMITTER: Chen S

PROVIDER: S-EPMC5063129 | biostudies-literature | 2016 Jan

REPOSITORIES: biostudies-literature

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Extremely Stable Current Emission of P-Doped SiC Flexible Field Emitters.

Chen Shanliang S Shang Minghui M Gao Fengmei F Wang Lin L Ying Pengzhan P Yang Weiyou W Fang Xiaosheng X

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20151117 1

Novel P-doped SiC flexible field emitters are developed on carbon fabric substrates, having both low Eto of 1.03-0.73 Vμm-1 up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%-3.4%). ...[more]

PMID: 27774383

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