Resistive Switching in All-Printed, Flexible and Hybrid MoS₂-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset.

ABSTRACT: Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS₂) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS₂-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS₂-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltag

SUBMITTER: Rehman MM 

PROVIDER: S-EPMC5095886 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature