Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

ABSTRACT: Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS₂) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS₂ negative differential resistance device is investigated in detail by an

SUBMITTER: Shim J 

PROVIDER: S-EPMC5103069 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature