Trap-mediated electronic transport properties of gate-tunable pentacene/MoS₂ p-n heterojunction diodes.

ABSTRACT: We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS₂) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS₂ and pentacene. The pentacene/MoS₂ p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study pr

SUBMITTER: Kim JK 

PROVIDER: S-EPMC5103186 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature