Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication.

ABSTRACT: In recent years, visible light communication (VLC) technology has attracted intensive attention due to its huge potential in superior processing ability and fast data transmission. The transmission rate relies on the modulation bandwidth, which is predominantly determined by the minority-carrier lifetime in III-group nitride semiconductors. In this paper, the carrier dynamic process under a stress field was studied for the first time, and the carrier recombination lifetime was calculated within the framework of quantum perturbation theory. Owing to the intrinsic strain due to the lattice mismatch between InGaN and GaN, the wave functions for the holes and electrons are misaligned in an InGaN/GaN device. By applying an external strain that "cancels" the internal strain, the overlap between

SUBMITTER: Du C 

PROVIDER: S-EPMC5107897 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature