Materials characterisation by angle-resolved scanning transmission electron microscopy.

ABSTRACT: Solid-state properties such as strain or chemical composition often leave characteristic fingerprints in the angular dependence of electron scattering. Scanning transmission electron microscopy (STEM) is dedicated to probe scattered intensity with atomic resolution, but it drastically lacks angular resolution. Here we report both a setup to exploit the explicit angular dependence of scattered intensity and applications of angle-resolved STEM to semiconductor nanostructures. Our method is applied to measure nitrogen content and specimen thickness in a GaN_xAs_1-x layer independently at atomic resolution by evaluating two dedicated angular intervals. We demonstrate contrast formation due to strain and composition in a Si- based metal-oxide semiconductor field effect trans

SUBMITTER: Muller-Caspary K 

PROVIDER: S-EPMC5111052 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature