Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co₂FeSi_0.5Al_0.5/Ge(111).

ABSTRACT: Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co₂FeSi_0.5Al_0.5 with uniform thickness and B2 ordering can form structurally abrupt interface with Ge(111). Atomic resolution energy dispersive X-ray spectroscopy reveals that there is a small outdiffusion of Ge into specific atomic planes of the Co₂FeSi_0.5Al_0.5 film, limited to a very narrow 1 nm interface region. First-principles calculations show that this selective outdiffusion along the Fe-Si/Al atomic planes does not change the magnetic moment of the film up to the very inte

SUBMITTER: Nedelkoski Z 

PROVIDER: S-EPMC5116668 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature