Fabrication of WS₂/GaN p-n Junction by Wafer-Scale WS₂ Thin Film Transfer.

ABSTRACT: High quality wafer-scale free-standing WS₂ grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS₂ was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS₂ onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS₂ and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS₂, which is the key factor for the wafer-scale etching-free transfer. The transferred fil

SUBMITTER: Yu Y 

PROVIDER: S-EPMC5126671 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature