Insulator-quantum Hall transitionin monolayer epitaxial graphene.

ABSTRACT: We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity ρ_xx, which are signatures of the insulator-quantum Hall (I-QH) transition, in all three devices. Upon converting the raw data into longitudinal and Hall conductivities σ_xx and σ_xy, in the most disordered device, we observed T-driven flow diagram approximated by the semi-circle law as well as the T-independent point in σ_xy near e²/h. We discuss our experimental results in the context of the evolution of the zero-energy Landau level at low magnetic fields B. We also compare the observ

SUBMITTER: Huang LI 

PROVIDER: S-EPMC5134328 | biostudies-literature | 2016

REPOSITORIES: biostudies-literature