Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b']dithiophene.

ABSTRACT: A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b']dithiophene ((C₁₂H₂₅)₂-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm² V^-1 s^-1. The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm² V^-1 s^-1, when a 150 nm-thick ZrO₂ gate dielectric was used. This implies that (C₁₂H₂₅)₂-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discus

SUBMITTER: Kubozono Y 

PROVIDER: S-EPMC5138603 | biostudies-literature | 2016 Dec

REPOSITORIES: biostudies-literature