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Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film.

ABSTRACT: For epitaxial films, a critical thickness (tc) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO3/SrRuO3/SrTiO3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.

SUBMITTER: Lee HJ 

PROVIDER: S-EPMC5144002 | biostudies-literature | 2016 Dec

REPOSITORIES: biostudies-literature

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Depth resolved lattice-charge coupling in epitaxial BiFeO<sub>3</sub> thin film.

Lee Hyeon Jun HJ   Lee Sung Su SS   Kwak Jeong Hun JH   Kim Young-Min YM   Jeong Hu Young HY   Borisevich Albina Y AY   Lee Su Yong SY   Noh Do Young DY   Kwon Owoong O   Kim Yunseok Y   Jo Ji Young JY  

Scientific reports 20161208

For epitaxial films, a critical thickness (t<sub>c</sub>) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the t<sub>c</sub> in BiFeO<sub>3</sub> thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO<sub>3</sub>/SrRuO<sub>3</sub>/SrTiO<sub>3</sub> substrate. We found larger Fe cation displacement of the relaxed layer than that of s  ...[more]

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