Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon.

ABSTRACT: The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO₂ microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO₂ microsphere and silicon substrate, resulti

SUBMITTER: Xiao C 

PROVIDER: S-EPMC5233974 | biostudies-literature | 2017 Jan

REPOSITORIES: biostudies-literature