A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics.

ABSTRACT: Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm^-1 and Seebeck coefficient from 100 to 60 μV K^-1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m^-1 K^-1 gives rise to a thermoelectric Figure of merit ZT ∼ 10^-4 that remains unaltered for an ins

SUBMITTER: Kiefer D 

PROVIDER: S-EPMC5238747 | biostudies-literature | 2017 Jan

REPOSITORIES: biostudies-literature