Understanding charge transport in lead iodide perovskite thin-film field-effect transistors.

ABSTRACT: Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI₃). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μ_FET) of 0.5 cm²/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopi

SUBMITTER: Senanayak SP 

PROVIDER: S-EPMC5271592 | biostudies-literature | 2017 Jan

REPOSITORIES: biostudies-literature