Robust ferromagnetism carried by antiferromagnetic domain walls.

ABSTRACT: Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conventional, large domains themselves, are the active elements. Here we show that atomically thin magnetic domain walls generated in the antiferromagnetic insulator Cd₂Os₂O₇ carry unusual ferromagnetic moments perpendicular to the wall as well as electron conductivity: the ferromagnetic moments are easily polarized even by a tiny field of 1 mT at high temperature, while,

SUBMITTER: Hirose HT 

PROVIDER: S-EPMC5308413 | biostudies-literature | 2017 Feb

REPOSITORIES: biostudies-literature