Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications.

ABSTRACT: Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al₂O₃ induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and pa

SUBMITTER: Kawarada H 

PROVIDER: S-EPMC5316979 | biostudies-literature | 2017 Feb

REPOSITORIES: biostudies-literature