MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co₂MnSi interlayers.

ABSTRACT: Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin polarization, it is predicted to be a kind of suitable magnetic electrode candidate in the perpendicular magnetic tunnel junction (p-MTJ) for high density spin transfer torque magnetic random access memory (STT-MRAM) applications. However, p-MTJs with both bottom and top MnGa electrodes have not been achieved yet, since high quality perpendicular magnetic MnGa films can hardly be obtained on the MgO barrier due to large lattice mismatch and surface energy difference between them. Here, a MnGa-based fully p-MTJ with the structure of MnGa/Co₂MnSi/MgO/Co₂MnSi/MnGa is investigated. As a result, the multilaye

SUBMITTER: Mao S 

PROVIDER: S-EPMC5324047 | biostudies-literature | 2017 Feb

REPOSITORIES: biostudies-literature