Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La_2/3Sr_1/3MnO₃.

ABSTRACT: Resistive switching in transition metal oxides involves intricate physical and chemical behaviours with potential for non-volatile memory and memristive devices. Although oxygen vacancy migration is known to play a crucial role in resistive switching of oxides, an in-depth understanding of oxygen vacancy-driven effects requires direct imaging of atomic-scale dynamic processes and their real-time impact on resistance changes. Here we use in situ transmission electron microscopy to demonstrate reversible switching between three resistance states in epitaxial La_2/3Sr_1/3MnO₃ films. Simultaneous high-resolution imaging and resistance probing indicate that the switching events are caused by the formation of uniform structural phases. Reversible horizontal migrati

SUBMITTER: Yao L 

PROVIDER: S-EPMC5331213 | biostudies-literature | 2017 Feb

REPOSITORIES: biostudies-literature