Thermal Conductance of the 2D MoS₂/h-BN and graphene/h-BN Interfaces.

ABSTRACT: Two-dimensional (2D) materials and their corresponding van der Waals heterostructures have drawn tremendous interest due to their extraordinary electrical and optoelectronic properties. Insulating 2D hexagonal boron nitride (h-BN) with an atomically smooth surface has been widely used as a passivation layer to improve carrier transport for other 2D materials, especially for Transition Metal Dichalcogenides (TMDCs). However, heat flow at the interface between TMDCs and h-BN, which will play an important role in thermal management of various electronic and optoelectronic devices, is not yet understood. In this paper, for the first time, the interface thermal conductance (G) at the MoS₂/h-BN interface is measured by Raman spectroscopy, and the room-temperature value is (17.0 ± 0.4)

SUBMITTER: Liu Y 

PROVIDER: S-EPMC5338337 | biostudies-literature | 2017 Mar

REPOSITORIES: biostudies-literature