Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory.

ABSTRACT: Mixed halide perovskite materials are actively researched for solar cells with high efficiency. Their hysteresis which originates from the movement of defects make perovskite a candidate for resistive switching memory devices. We demonstrate the resistive switching device based on mixed-halide organic-inorganic hybrid perovskite CH₃NH₃PbI_3-xBr_x (x = 0, 1, 2, 3). Solvent engineering is used to deposit the homogeneous CH₃NH₃PbI_3-xBr_x layer on the indium-tin oxide-coated glass substrates. The memory device based on CH₃NH₃PbI_3-xBr_x exhibits write endurance and long retention, which indicate reproducible and reliable memory properties. According to the increase in

SUBMITTER: Hwang B 

PROVIDER: S-EPMC5341555 | biostudies-literature | 2017 Mar

REPOSITORIES: biostudies-literature