Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices.

ABSTRACT: Barium hexaferrite (BaM) films with in-plane c-axis orientation are promising and technically important materials for self-biased magnetic microwave devices. In this work, highly oriented BaM films with different thickness and an in-plane easy axis (c-axis) of magnetization were grown on a-plane single-crystal sapphire substrates by direct current magnetron sputtering. A procedure involving seed layers, layer-by-layer annealing was adopted to reduce the substrate-induced strains and allow for the growth of thick (~3.44 μm) films. The epitaxial growth of the BaM film on sapphire was revealed by high-resolution transmission electron microscopy with dislocations being observed at the film-substrate interface. The orientation was also verified by X-ray diffraction and more notably, polarized R

SUBMITTER: Zhang X 

PROVIDER: S-EPMC5343456 | biostudies-literature | 2017 Mar

REPOSITORIES: biostudies-literature