Resistive switching mechanism in the one diode-one resistor memory based on p⁺-Si/n-ZnO heterostructure revealed by in-situ TEM.

ABSTRACT: One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p⁺-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behavi

SUBMITTER: Zhang L 

PROVIDER: S-EPMC5359668 | biostudies-literature | 2017 Mar

REPOSITORIES: biostudies-literature