Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors.

ABSTRACT: There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive lay

SUBMITTER: Fahad HM 

PROVIDER: S-EPMC5365249 | biostudies-literature | 2017 Mar

REPOSITORIES: biostudies-literature