Uniform Atomic Layer Deposition of Al₂O₃ on Graphene by Reversible Hydrogen Plasma Functionalization.

ABSTRACT: A novel method to form ultrathin, uniform Al₂O₃ layers on graphene using reversible hydrogen plasma functionalization followed by atomic layer deposition (ALD) is presented. ALD on pristine graphene is known to be a challenge due to the absence of dangling bonds, leading to nonuniform film coverage. We show that hydrogen plasma functionalization of graphene leads to uniform ALD of closed Al₂O₃ films down to 8 nm in thickness. Hall measurements and Raman spectroscopy reveal that the hydrogen plasma functionalization is reversible upon Al₂O₃ ALD and subsequent annealing at 400 °C and in this way does not deteriorate the graphene's charge carrier mobility. This is in contrast with oxygen plasma functionalization, which can lead

SUBMITTER: Vervuurt RH 

PROVIDER: S-EPMC5384478 | biostudies-literature | 2017 Mar

REPOSITORIES: biostudies-literature