Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars.

ABSTRACT: The III-V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the performance of nanophotonic devices for optical interconnects, namely nanolasers and nanodetectors. This work reports the strong suppression of surface recombination of undoped InGaAs/InP nanostructured semiconductor pillars using a combination of ammonium sulfide, (NH₄)₂S, chemical treatment and silicon oxide, SiO_x, coating. An 80-fold enhancement in the photoluminescence (PL) intensity of submicrometer pillars at a wavelength of 1550 nm is observed as compared with the unpassivat

SUBMITTER: Higuera-Rodriguez A 

PROVIDER: S-EPMC5391499 | biostudies-literature | 2017 Apr

REPOSITORIES: biostudies-literature