Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device.

ABSTRACT: Using x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cross-tuning of the x-ray mode and photon energy, when voltage was applied. At the early stage of the operation, the device exhibited a low-resistance state featuring robust Fe-O bonds. However, the Fe-O bonds were broken with increasing voltage. Breaking of the Fe-O bonds caused the formation of oxygen vacancies and resulted in a high-resistance state. Such interface reconstruction was coupled to a charge-transfer effect via Fe-O hybridization, which suppressed/enhanced the magnetization/coercivity of Fe e

SUBMITTER: Chang SJ 

PROVIDER: S-EPMC5428722 | biostudies-literature | 2017 Mar

REPOSITORIES: biostudies-literature