The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties.

ABSTRACT: Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via studying the resonant interaction between anions or vacancies in ZnON. It is found that the incorporation of nitrogen increases the concentration of nitrogen vacancies (VN+s), which generate larger concentrations of free electrons with increased mobility. However, a critical amount of nitrogen exists, above which electrically inactive divacancy (VN-VN)0 forms, thus reducing the number of carriers and their mobility. The presence of nitrogen anions also reduces the relative content of oxygen anio

SUBMITTER: Park J 

PROVIDER: S-EPMC5437099 | biostudies-literature | 2017 May

REPOSITORIES: biostudies-literature