A two-dimensional semiconductor transistor with boosted gate control and sensing ability.

ABSTRACT: Transistors with exfoliated two-dimensional (2D) materials on a SiO₂/Si substrate have been applied and have been proven effective in a wide range of applications, such as circuits, memory, photodetectors, gas sensors, optical modulators, valleytronics, and spintronics. However, these devices usually suffer from limited gate control because of the thick SiO₂ gate dielectric and the lack of reliable transfer method. We introduce a new back-gate transistor scheme fabricated on a novel Al₂O₃/ITO (indium tin oxide)/SiO₂/Si "stack" substrate, which was engineered with distinguishable optical identification of exfoliated 2D materials. High-quality exfoliated 2D materials could be easily obtained and recognized on this stack. Two typical 2D m

SUBMITTER: Xu J 

PROVIDER: S-EPMC5438220 | biostudies-literature | 2017 May

REPOSITORIES: biostudies-literature