Thin Al_1-x Ga _x As_0.56Sb_0.44 diodes with extremely weak temperature dependence of avalanche breakdown.

ABSTRACT: When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al_1-x Ga _x As_0.56Sb_0.44 p-i-n diode wafers (Ga composition from 0 to 0.15), plus measurements of avalanche gain and dark current. Based on data obtained from 77 to 297 K, the alloys Al_1-x Ga _x As_0.56Sb_0.44 exhibited weak temperature dependence of avalanche gain and breakdown voltage, with temperature coefficient approximately 0.86-1.08 mV K^-1, among the lowest values reported for a

SUBMITTER: Zhou X 

PROVIDER: S-EPMC5451814 | biostudies-literature | 2017 May

REPOSITORIES: biostudies-literature