Three-dimensional crossbar arrays of self-rectifying Si/SiO₂/Si memristors.

ABSTRACT: Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor arrays to function properly. Here we demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays. With a p-Si/SiO₂/n-Si structure, our memristor exhibits repeatable unipolar resistance switching behaviour (10⁵ rectifying ratio, 10⁴ ON/OFF) and excellent retention at 300 °C. We further build three-dimensinal crossbar arrays (up to five layers of 100 nm memristors) using fluid-su

SUBMITTER: Li C 

PROVIDER: S-EPMC5465358 | biostudies-literature | 2017 Jun

REPOSITORIES: biostudies-literature