Defect Dominated Charge Transport and Fermi Level Pinning in MoS₂/Metal Contacts.

ABSTRACT: Understanding the electronic contact between molybdenum disulfide (MoS₂) and metal electrodes is vital for the realization of future MoS₂-based electronic devices. Natural MoS₂ has the drawback of a high density of both metal and sulfur defects and impurities. We present evidence that subsurface metal-like defects with a density of ∼10¹¹ cm^-2 induce negative ionization of the outermost S atom complex. We investigate with high-spatial-resolution surface characterization techniques the effect of these defects on the local conductance of MoS₂. Using metal nanocontacts (contact area < 6 nm²), we find that subsurface metal-like defects (and not S-vacancies) drastically decrease the metal/MoS₂ Schottky barrie

SUBMITTER: Bampoulis P 

PROVIDER: S-EPMC5465510 | biostudies-literature | 2017 Jun

REPOSITORIES: biostudies-literature