Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX₂ (X = Se, S) Transition Metal Dichalcogenide Films.

ABSTRACT: Electron-donors can impart charge to the surface of transition metal dichalcogenide (TMD) films while interacting with the film via a weak physisorption bond, making them ideal for vapor and gas sensors. We expose monolayer MoS₂ and MoSe₂ films to strong electron-donor chemical vapor analytes. After analyzing the resultant behavior and taking into consideration doping effects, we conclude that exposure to strong electron-donors could be a method of inducing the semiconductor-metal 2H-1T TMD phase transition. We find that the conductance response to strong electron donors in both monolayer MoS₂ and MoSe₂ FET devices ceases after moderate exposure, with final value of the conductance being on order of that expected for the 1T phase. Full device rel

SUBMITTER: Friedman AL 

PROVIDER: S-EPMC5476674 | biostudies-literature | 2017 Jun

REPOSITORIES: biostudies-literature