Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes.

ABSTRACT: Non-volatile memories-providing the information storage functionality-are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is

SUBMITTER: Ghittorelli M 

PROVIDER: S-EPMC5477493 | biostudies-literature | 2017 Jun

REPOSITORIES: biostudies-literature