Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications.

ABSTRACT: This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF₆ with additive O₂ was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl₃ + N₂ gas mixtures show better characteristics, exhibiting a con

SUBMITTER: Sung HK 

PROVIDER: S-EPMC5478634 | biostudies-literature | 2017 Jun

REPOSITORIES: biostudies-literature