Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors.

ABSTRACT: Temperature sensors are routinely found in devices used to monitor the environment, the human body, industrial equipment, and beyond. In many such applications, the energy available from batteries or the power available from energy harvesters is extremely limited due to limited available volume, and thus the power consumption of sensing should be minimized in order to maximize operational lifetime. Here we present a new method to transduce and digitize temperature at very low power levels. Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capa

SUBMITTER: Wang H 

PROVIDER: S-EPMC5493670 | biostudies-literature | 2017 Jun

REPOSITORIES: biostudies-literature