Lateral multilayer/monolayer MoS₂ heterojunction for high performance photodetector applications.

ABSTRACT: Inspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS₂ heterojunction. Good gate-tunable current-rectifying characteristics are observed with a rectification ratio of 10³ at V _gs = 10 V, which may offer an evidence on the existence of the heterojunction. Upon illumination from ultraviolet to visible light, the multilayer/monolayer MoS₂ heterojunction shows outstanding photodetective performance, with a photoresponsivity of 10³ A/W, a photosensitivity of 1.7 × 10⁵ and a detectivity of 7 × 10¹⁰ Jones at 470 nm light illumination. Abnormal photoresponse under pos

SUBMITTER: Sun M 

PROVIDER: S-EPMC5495793 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature